Company:
Qorvo
Location: Chelmsford
Closing Date: 10/11/2024
Salary: £100 - £125 Per Annum
Hours: Full Time
Type: Permanent
Job Requirements / Description
Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare and aerospace/defense. Visit to learn how our diverse and innovative team is helping connect, protect and power our planet.
RESPONSIBILITIES:
- Responsible for module level design and integration of PAs, LNAs, switches and filters into highly compact multi-chip modules (MCM).
- Thorough understanding of ADS and em tools such as HFSS and Momentum and how they apply to laminate based modules.
- Conducting peer reviews of designs, including expected and/or actual results.
- Writing regular updates on design/evaluation status.
- Committed engineer able to execute to an aggressive schedule.
QUALIFICATIONS:
- Proficiency with Keysight ADS and/or similar simulators for all stages of RFIC design, including Harmonic Balance, S-Parameter, Transient and Envelope Simulation. Detailed transistor-level knowledge of RF and microwave circuit design techniques including linear power amplifier design; high-efficiency power amplifier design, low noise amplifiers, bias circuits, and module design.
- Knowledge of test and measurement techniques and equipment for RF circuits, such as signal generators, VNAs, and spectrum/signal analyzers.
- Use of EM simulators such as ADS Momentum, ADS FEM, and/or Ansys HFSS in conjunction with circuit simulators to accurately predict overall circuit performance.
- Require MS in Electrical Engineering (or foreign equivalent) and up to 3 years' experience in RFIC layout and tape-out, using III-V HBT, III-V HEMT, Si CMOS, SOI, and/or BiCMOS technologies; circuit and EM simulation in Keysight ADS including experience with ADS Momentum, ADS FEM and/or HFSS; discrete power amplifier design for frequencies of 1-5GHz; measurement of designed circuits after tapeout; knowledge of test and measurement techniques for RF circuits; and use of signal generators, vector network analyzers, and spectrum/signal analyzers.
- Understanding of thermal management in power amplifiers.
- Ability to work in a fast-paced, highly motivated and very interactive team environment.
- Adapt to new customer requirements for ruggedness, ESD, and quality.
- Strong written and verbal communication skills to convey complex technical information.
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